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http://repository.aaup.edu/jspui/handle/123456789/1107
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | A. F Qasrawi | - |
dc.date.accessioned | 2020-02-24T12:15:13Z | - |
dc.date.available | 2020-02-24T12:15:13Z | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | Volume 21, Number 6 | en_US |
dc.identifier.issn | https://doi.org/10.1088/0268-1242/21/6/015 | - |
dc.identifier.uri | http://repository.aaup.edu/jspui/handle/123456789/1107 | - |
dc.description.abstract | The optical properties of amorphous GaSe thin films deposited onto tin oxide (TO) coated glass substrates are presented for the purpose of using this material for the fabrication of metal-semiconductor devices. Specifically, the room temperature direct allowed and forbidden transition energy band gaps of glass/TO and glass/TO/GaSe films are estimated and found to exhibit values of 3.95 and 1.95 eV, respectively. The temperature dependence of the energy band gap of the glass/TO/GaSe is also studied in the temperature range of 295 - 450 K by means of optical transmittance and reflectance spectra. This study allowed the identification of the rate of change of the band gap with temperature as -5.0 x 10(-4) eV K-1 and the 0 K energy band gap as 2.1 eV. The above reported optical parameters of the glass/TO/GaSe structure seem to be suitable for semiconductor device production such as solar cell converters, metal - insulator - semiconductor (MIS), metal-oxide-semiconductor (MOS), MOSFET, etc devices. As an application, we have used the glass/TO/GaSe substrate for fabricating Schottky diodes using Ag and Au point contacts. The diodes are characterized by measuring the current (I) - voltage (V) characteristics at room temperature. The I - V curves exhibit rectifying properties. The I-V data analysis in the Schottky region (below 1.0 V) revealed barrier heights of 0.60 and 0.73 eV for Ag and Au point contacts, respectively. | en_US |
dc.publisher | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | en_US |
dc.subject | GASE THIN-FILMS | en_US |
dc.subject | OPTICAL-PROPERTIES | en_US |
dc.subject | TEMPERATURE | en_US |
dc.subject | SEMICONDUCTOR-DETECTORS | en_US |
dc.subject | BEAMS | en_US |
dc.subject | BAND-GAP | en_US |
dc.title | Fabrication and characterization of TO/GaSe/(Ag, Au) Schottky diodes | en_US |
dc.type | Article | en_US |
Appears in Collections: | Faculty & Staff Scientific Research publications |
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