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http://repository.aaup.edu/jspui/handle/123456789/1126
Title: | Temperature-dependent capacitance-voltage biasing of the highly tunable TlGaTe2 crystals |
Authors: | A. F Qasrawi gasanly, n. m.$Other$Other |
Keywords: | Varactor TlGaSe2 Capacitance Barrier height |
Issue Date: | 15-Jul-2012 |
Publisher: | PHYSICA B-CONDENSED MATTER |
Citation: | Volume 407, Issue 14, 15 July 2012, Pages 2749-2752 |
Abstract: | The temperature effects on the capacitance-voltage characteristics as well as the room temperature capacitance-frequency characteristics of TlGaTe2 crystals are investigated. A very wide range of linearly varying tunable capacitance from 6.0 mu F to 60 pF was recorded. The capacitance-voltage characteristics, being recorded in the temperature range of 290-380 K, revealed a linear increase in the build in voltage associated with exponential decrease in the density of non-compensated ionized carriers with increasing temperature. The high temperature (up to 380 K) biasing ability, the linear tunability and the high dielectric constant values ( similar to 10(3)) make the TlGaTe2 crystals applicable in microelectronic components. (C) 2012 Elsevier B.V. All rights reserved. |
URI: | http://repository.aaup.edu/jspui/handle/123456789/1126 |
ISSN: | https://doi.org/10.1016/j.physb.2012.04.020 |
Appears in Collections: | Faculty & Staff Scientific Research publications |
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