Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1183
Title: Optical properties of Tl2InGaS4 layered single crystal
Authors: A. F Qasrawi
gasanly, n. m.$Other$Other
Keywords: semiconductors
optical properties
lattice parameters
band gap
refractive index
Issue Date: 2007
Publisher: OPTICAL MATERIALS
Citation: Volume 29, Issue 12, August 2007, Pages 1763-1767
Abstract: The temperature dependence of the optical band gap of Tl2InGaS4 single crystal in the temperature region of 300-500 K and the room temperature refractive index, n(lambda), have been investigated. The absorption coefficient, which was calculated from the transmittance and reflectance spectra in the incident photon energy range of 2.28-2.48 eV, increased with increasing temperature. Consistently, the absorption edge shifts to lower energy values as temperature increases. The fundamental absorption edge corresponds to an indirect allowed transitions energy gap (2.35 eV) that exhibits a temperature coefficient of -4.03 x 10(-4) eV/K. The room temperature n(lambda), calculated from the reflectance and transmittance data, allowed the identification of the oscillator strength and energy, static and lattice dielectric constants, and static refractive index as 16.78 eV and 3.38 eV, 5.96 and 11.77, and 2.43, respectively. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://repository.aaup.edu/jspui/handle/123456789/1183
ISSN: https://doi.org/10.1016/j.optmat.2006.09.008
Appears in Collections:Faculty & Staff Scientific Research publications

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