Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1184
Title: Energy band gap and oscillator parameters of Ga4Se3S single crystals
Authors: A. F Qasrawi
gasanly, n. m.$Other$Other
Keywords: semiconductors
crystal growth
optical properties
X-ray scattering
Issue Date: 2007
Publisher: SOLID STATE COMMUNICATIONS
Abstract: The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means of room temperature, transmittance and reflectance spectral analysis. The optical data have revealed an indirect allowed transition band gap of 2.08 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 21.08 and 3.85 eV, 6.48 and 2.55, respectively. (C) 2007 Elsevier Ltd. All rights reserved.
URI: http://repository.aaup.edu/jspui/handle/123456789/1184
Appears in Collections:Faculty & Staff Scientific Research publications

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