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dc.contributor.authorA. F Qasrawi-
dc.contributor.authorgasanly, n. m.$Other$Other-
dc.identifier.citationVolume 426, Issues 1–2, 21 December 2006, Pages 64-66en_US
dc.description.abstractSystematic dark electrical resistivity and Hall coefficient measurements have been carried out in the temperature range of 170-320 K on n-type In6S7 crystals. The analysis of the electrical resistivity and carrier concentration reveals the intrinsic type of conduction with an average energy band gap of similar to 0.75 eV The carrier effective masses of the conduction and valence bands were calculated from the intrinsic temperature-dependent carrier concentration data and were found to be 0.565m(0) and 2.020m(0), respectively. The temperature-dependent Hall mobility was observed to follow the mu alpha T-3/2 law and was analyzed assuming the domination of acoustic phonons scattering. The acoustic phonons scattering mobility was calculated from the crystal's structural data with no assumptions. The experimental Hall mobility data of In6S7 crystals coincides with the theoretical acoustic phonons scattering mobility data with acoustic deformation potential of 6.4 eV. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.subjectcrystal growthen_US
dc.subjectX-ray diffractionen_US
dc.subjectelectronic transporten_US
dc.titleAcoustic phonons scattering mobility and carrier effective mass in In6S7 crystalsen_US
Appears in Collections:Faculty & Staff Scientific Research publications

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