Yb/MoO3/In2Se3/Ag Sensors Designed as Tunneling Diodes, MOSFETs, Microwave Resonators, Laser Sensors, and VLC Receivers Suitable for 4G/5G and VLC Technologies

Abstract

Herein, stacked layers of Yb/MoO3/In2Se3/Ag (MI) heterojunctions are employed as multifunctional sensors. The theoretical design of the energy band diagrams of the MI sensors revealed hybrid structure. Investigations on the current conduction mechanism indicated the domination of thermionic and electric field-assisted tunneling mechanisms. MI sensors display rectifying tunneling diode characteristics. In addition, the capacitance–voltage characteristics have shown that the hybrid MI sensors can performas enhancedmetal–oxide–semiconductor-field effect transistor (MOSFET) devices with both nMOS and pMOS channels.Moreover, the impedancespectral analyses revealed that the MI sensors can be excellent microwave resonators (MRs) exhibiting bandpass/reject filter characteristics with microwave cutoff frequency, return loss, and voltage standing wave ratios of 18.73 GHz, 24 dB, and 1.0 at notch frequency of 1.56 GHz, respectively. These parameters reflect the applicability of the MI sensors in 4G/5G mobile technologies.On the other hand, exciting theMI sensors with 406- and 850-nm lasers and daylight light emitting diode (LED) showed that theMI sensors are good photosensors exhibiting maximum current responsivity, detectivity, and external quantum efficiency of 50, 20, and 11 mA/W; 1.14 × 1011, 4.68 × 1010 and 2.35 × 1010 Jones; and 15.5%, 3.05%, and 2.37%, respectively. These parameters indicated that the MI sensors are suitable for lasers sensing and for visible light communication (VLC) technology as signal receivers.