LaGe2 Thin Films Designed as Band Filters for 6G Communication Technology

Abstract

Herein, LaGe2 thin films with thickness of 150 nm are grown on thin layers of indium by the thermal evaporation technique under a vacuum pressure of 10− 5 mbar. The films are structurally, morphologically, compositionally and electrically characterized. It is observed that thin films of LaGe2 are polycrystalline in nature, comprising slightly excess germanium in their structure. To establish their applicability in communication technology, two In/LaGe2/Ag and In/LaGe2/C electrical channels are formed. Both of the channels performed as negative resistance and capacitance sources. The channels exhibited microwave cutoff frequency exceeding 200 GHz. The resonance in the In/LaGe2/Ag and In/LaGe2/C channels dominates at driving frequencies of 1.21 GHz and 1.42 GHz, respectively. The measured impedance, magnitude of reflection coefficient ( S11 parameter), return loss and voltage standing wave ratio spectra confirmed the suitability of the LaGe2 thin films for wireless 6G communication technology.