Fabrication and Characterization of Wide Band Photoconductor Array رسالة ماجستير

Abstract

In this thesis, a wide band photoconductor array is designed and characterized. The wide band photoconductor array is designed from materials exhibiting energy band gaps of values in the range 1.1-3.33 eV. Our photoconductor array consists of Cadmium sulfide, Gallium Selenide, Indium Selenide, Germanium, Zinc Sulfide and Indium Selenide/ Cadmium sulfide heterojunction. The photoconductor array is subjected to various types of laser excitations including lasers of wavelengths of 406, 632, 850 and 1550 nm and tungsten light. The measurements allowed determining the array photoresponsivity, photosensitivity, external quantum efficiency and internal quantum efficiency. The photosensitivity and generated photocurrent increase with power for lasers and tungsten light while external quantum efficiency, internal quantum efficiency and photoresponsivity decrease with power of lasers and tungsten. The maximum value of photosensitivity is achieved for Cadmium sulfide while the maximum value of generated photocurrent is achieved for connected array. The maximum values of external quantum efficiency, internal quantum efficiency and photoresponsivity are achieved for Indium Selenide.