Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/3265
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dc.contributor.authorQasrawi, Atef$AAUP$Palestinian-
dc.date.accessioned2025-04-22T06:08:23Z-
dc.date.available2025-04-22T06:08:23Z-
dc.date.issued2025-04-20-
dc.identifier.citationMaterials Science and Engineering: B Volume 318, August 2025, 118322en_US
dc.identifier.issnhttps://doi.org/10.1016/j.mseb.2025.118322 Get rights and content-
dc.identifier.urihttp://repository.aaup.edu/jspui/handle/123456789/3265-
dc.description.abstractHerein, hexagonal selenium microrods are deposited onto tetragonal barium oxide substrates by the thermal evaporation technique under a vacuum pressure of 10-5 mbar. Optical studies indicated that BaO and Se exhibited band gaps of 3.55 eV and 2.33 eV, respectively. BaO/Se interfaces exhibited a valence and conduction band offsets of 0 eV and 1.22 eV, respectively. In addition, depositing Se layers onto BaO substrates, remarkably, enhanced the light absorption of Se by more than 100 % in the spectral range of 1.9–4.0 eV and by 1100 % at 3.0 eV. Moreover, the analyses of the dielectric, the optical conductivity and terahertz cutoff frequency showed the suitability of the BaO/Se heterojunctions for the fabrication of terahertz optical filters. Electrically, Au/BaO/Se/Au planner waveguides exhibited low pass filter and antenna characteristics that suits microwave technology in the gigahertz frequency domain. The features of the BaO/Se devices are promising for using them in electro-optical systems.en_US
dc.language.isoenen_US
dc.publisherMaterials Science and Engineering: Ben_US
dc.relation.ispartofseries318;118322-
dc.subjectBaO/Se;Band offsets;Enhanced absorbers; Terahertz;Waveguidesen_US
dc.titleBaO/Se heterojunctions designed as effective light Absorbers, terahertz optical filters and microwave waveguidesen_US
dc.typeArticleen_US
Appears in Collections:Faculty & Staff Scientific Research publications

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