Ytterbium based back-to-back Schottky diodes as light-activated MOS capacitors and high-frequency band filters for next-generation 6G applications

Abstract

In this study, Yb/p-Si/Yb Schottky devices were fabricated by thermally evaporating Yb contacts onto p-Si substrates under high vacuum, exhibiting MOS characteristics. These devices feature tunable flat band voltage and built-in potential under illumination, with a photo-controlled cutoff frequency spanning from the microwave to the terahertz regime. Functioning as microwave band filters, they show reflection coefficient, return loss, and voltage standing wave ratio values suitable for microwave resonators. Simulation suggests that optimizing resistance and capacitance enhances the reflection coefficient, return loss, and voltage standing wave ratio, improving performance for next-generation and terahertz applications.