Band gap aligned n-Si/ n-Ag2O interfaces fabricated for microwave technology applications

Abstract

Herein n-Ag2O thin films were deposited onto n-Si substrates to perform as a high frequency device operating in the 5G/6G frequency domains. n 􀀀 Ag2O layers were deposited onto n-Si wafers by the thermal evaporation technique and top coated with Pt Schottky point contacts. Two channels, SA-100 and SA-500 with n 􀀀 Ag2O layer thickness of 100 nm and 500 nm, respectively, were designed. While the SA-100 channel exhibited MOS device characteristics depletable up to 10 MHz, SA-500 channel was depleted up to 100 MHz. In addition, SA-100 and SA-500 channels exhibited resonance with mostly negative capacitance and positive capacitance effects, respectively. Moreover, SA-100 channels are found to be sources of negative cutoff frequency suitable as frequency stabilizers. As disk shaped antennas SA-100 channels displayed a reflection parameter (S11) of –33 dB at signal frequency of 3.30 GHz. The features of the SA-xx devices are promising as MOS device and as high frequency antennas.