Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1616
Title: Voltage and frequency controlled Ge/SeO2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sources
Authors: Qasrawi, A. F. $AAUP$Palestinian
khanfar, Hazem$AAUP$Palestinian
Keywords: Ag/Ge/SeO2/Ag, X-ray, MOS, Negative conductance, Negative capacitance
Issue Date: 12-Mar-2023
Publisher: Chalcogenide Letters
Citation: Vol. 20, No. 3, March 2023, p. 177 - 186
Abstract: Herein voltage and frequency controlled thin film transistors fabricated by depositing SeO2 onto germanium thin crystals are reported. For these devices measurements of the current-voltage characteristics revealed a biasing dependent rectification ratios. The devices showed metal-oxide-semiconductor character under reverse biasing conditions. In addition, the biasing dependent capacitance and conductance spectral studies in the frequency domain of 20M-1000MHz has shown the possibility of switching the capacitance and negative conductance from negative mode to positive mode. The features of the Ge/SeO2 devices make them attractive for use in electronic circuits as parasitic capacitive circuit elements, noise reducers, signal amplifiers and microwave oscillators.
URI: http://repository.aaup.edu/jspui/handle/123456789/1616
ISSN: https://doi.org/10.15251/CL.2023.203.177
Appears in Collections:Faculty & Staff Scientific Research publications

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