Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/2680
Title: Impact Of Indium Nano-Layers On The Physical Properties Of Ga2S3 Thin Films رسالة ماجستير
Authors: Nazzal, Eman Omer$AAUP$Palestinian
Keywords: communication engineering,electrical mcasurements,optical
Issue Date: 2017
Publisher: AAUP
Abstract: In this thesis indium metallic nano- layers of thicknesses of 20, 50, 100 and 200 nm were sandwiched between two 500 nm thick Ga2S3 thin films. The physical vapor deposition technique under vacuum pressure of 10-5 mbar was employed for this purpose. The effects of the In metal nanolayers on the morphological, compositional, structural, optical, dielectric and electrical properties were investigated by means of scanning electron microscopy, energy dispersive X-ray analyzer, X-ray diffraction, ultraviolet-visible light spectrophotometry, impedance spectroscopy and temperature dependent electrical conductivity measurements, respectively. It was observed that the nanosandwiched films exhibit a stoichiometric Ga2S3 polymorphic phases that include very dense randomly distributed grains of sizes of 7-20 nm for the Ga2S3 and ~100 nm for the indium grains. The optical properties of the nanosandwiched films have shown the possibility of engineering of the energy band gap in the range that shift from the blue to the red limit by increasing the indium slab thickness. In addition, the dielectric spectral studies were observed to exhibit a significant increase in the dielectric constant value with increasing indium slab thickness. The modeling of the imaginary parts of the dielectric constant, for different indium thickness, revealed a wide variety in the plasmon resonant frequency on the surface of the Ga2S3/In/ Ga2S3 films associated with the scattering time of electrons at femtosecond level. The dielectric analysis and modeling indicates the importance of such films in the production of broad and high frequency filters. Moreover, the impedance vii spectral analysis in the frequency range of 10-1800 MHz on the nanosandwiched films revealed the applicability of the films as low pass filters. Furthermore, the electrical analysis revealed a significant decreasing of the resistivity by five order of magnitudes with increasing indium layer thickness. In addition, the calculated activation energies of the films decreased with increasing thickness of Indium. In light of these investigation it is possible to nominate the indium nanosandwiched films for optoelectronic and microwave applications as active components for communication technology
Description: Master’s degree in Physics
URI: http://repository.aaup.edu/jspui/handle/123456789/2680
Appears in Collections:Master Theses and Ph.D. Dissertations

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