Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/2838
Title: Formation and characterization of the In2Se3/CuO heterojunctions
Authors: Kmail, Reham Reda$AAUP$Palestinian
Keywords: Terahertz; InSe; CuO; Heterojunction; Plasmon; band offset
Issue Date: 2018
Publisher: AAUP
Abstract: In this thesis, we have discussed the formation and performance of 𝛾− In2Se3/CuO heterojunctions from structural, optical, dielectric and electrical point of view. The heterojunction device is prepared onto glass and aluminum substrates by the physical vapor deposition technique under vacuum pressure of 10-5 mbar. To guarantee the polycrystalline nature and the correct optimization of the 𝛾− In2Se3, the substrates are kept at 250 oC during the evaporation of indium selenide. The X-ray diffraction analysis on the films and its composers has shown that while the 𝛾− In2Se3 is of polycrystalline nature, the CuO is amorphous in its as grown form. The evaporation of CuO onto indium selenide resulted in strained nature of growth. On the other hand, the optical analysis which is carried out in the incident light wavelength range of 300-1100 nm have shown that the energy band gaps of the 𝛾− In2Se3 and CuO are of direct allowed electronic transitions type and the formation of the heterojunction is associated with band tails that extend in the band gap of both materials. The calculated valence and conduction band offsets are observed to be sufficient to actualize the needed quantum confinement for thin film transistor fabrication. As a result of the optical analysis, the dielectric spectra for the 𝛾− In2Se3/CuO heterojunctions are calculated and discussed. From the dielectric spectra, the optical conductivity parameters are estimated via Drude-Lorentz approach for conductivity spectra. The obtained optical conductivity parameters presented by drift mobility, free carrier density, plasmon frequency and electron-plasmon reduced V frequency all exhibit values that are very attractive for thin film transistor technology. In addition, the heterojunction device which is prepared onto Al metal substrate displayed novel parameters presented by resonance-antiresonance phenomena and negative capacitance effect. These two features are also theoretically studied by the existing correlated barrier hopping and quantum mechanical tunneling theories. The resonance –antiresonance effects are analyzed in accordance with the Ershov model for electrical conduction. Furthermore, the current transport mechanism which is investigated by means of Schottky-Richardson mechanisms reveal a barrier height that is suitable for optoelectronic switching characteristics.
Description: Master’s degree in Physics
URI: http://repository.aaup.edu/jspui/handle/123456789/2838
Appears in Collections:Master Theses and Ph.D. Dissertations

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