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Title: | Physical Design and Characterization of Ge/InSe/Ga2S3 Hybrid Devices رسالة ماجستير |
Authors: | Omareya, Olfat Abdulfatah$AAUP$Palestinian |
Keywords: | circuit,gn/inse/telecommunication engineering,vswr |
Issue Date: | 2017 |
Publisher: | AAUP |
Abstract: | In this thesis, the design and characterization of metal-heterojunction-metal structure were studied as a n p junction device. In the growth process, the 𝑛 −type InSe (200 nm) was deposited onto a 𝑝 −Ge film of 200 nm thickness. The Ge/InSe interface was used as substrate to evaporate the 𝑛 −Ga2S3 films of 200 nm thickness. The interface was structurally, optically and electrically characterized by means of scanning electron microscopy, energy dispersive X-ray analysis (EDX), X-ray diffraction, UV-visible spectrophotometry, impedance spectroscopy and current-voltage characteristics. The X-ray diffraction patterns which were collected from the surface of the Ge/Ga2S3 and InSe/Ga2S3 indicated a polycrystalline nature of the heterojunctions with the domination of diamond Ge structure in the Ge/Ga2S3 interface and the domination of the monoclinic α-Ga2S3 in the Ge/Ga2S3 interface. The EDX analysis proved the physical nature of formation of the layers with the correct stoichiometric composition. In addition, the optical transmittance and reflectance spectral analysis revealed wide band gap attenuation upon layers interfacing. The conduction and valence offsets calculations indicated values that are large enough to actualize quantum confinement of holes and electrons to illuminate direct carrier recombination and as a result enhances the light absorbance. The dielectric performance of viii the hybrid device was evaluated through the Drude-Lorentz modeling which reveals electron-plasmon interactions through scattering times of femtosecond level leading to a drift mobility of 27.4 cm2/Vs. The maximum plasmon frequency for the three layers was in the range 1.8-3.8 GHz. Moreover, the impedance spectral measurements in the range of 10-1800 MHz indicated negative capacitance effect associated with parallel and series resonance at ~180 MHz. The return loss and reflection coefficient in that range behaved as a band stop filter with spectral width of 1400 MHz. Furthermore, the sandwiching of the hybrid device between two electrodes of aluminum revealed a back-to-back Schottky device that conducts current via Richardson-Schottky mechanism in which carriers have sufficient energy to overcome the barriers. The Ge/InSe/Ga2S3 device seems to be promising as a thin film transistor which can perform as plasmonic device and microwave resonator as well |
Description: | Master’s degree in Physics |
URI: | http://repository.aaup.edu/jspui/handle/123456789/2859 |
Appears in Collections: | Master Theses and Ph.D. Dissertations |
Files in This Item:
File | Description | Size | Format | |
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الفت عمرية.pdf | 2.58 MB | Adobe PDF | View/Open |
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