Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1137
Title: Effects of photoexcitation on the current transport mechanism in amorphous indium selenide thin films
Authors: A. F Qasrawi
Keywords: amorphous semiconductor
conductivity
hopping transport
Issue Date: 2010
Publisher: PHILOSOPHICAL MAGAZINE
Citation: Volume 90, 2010 - Issue 22
Abstract: The effect of photoexcitation on the current transport mechanism in amorphous indium selenide thin films was studied by means of dark and illuminated conductivity measurements as a function of temperature. Analysis of the dark electrical conductivity in the temperature range 110-320 K reveals behaviour characteristic of carriers excited to the conduction band and thermally assisted variable-range hopping (VRH) at the Fermi level above 280 K and below 220 K, respectively. In the temperature range 220-280 K, a mixed conduction mechanism was observed. A conductivity activation energy of 300 meV (above 280 K), a density of localised states (evaluated assuming a localisation length of 5 angstrom) of 1.08 x 1021 cm-3 eV-1, an average hopping distance of 20.03 angstrom (at 120 K) and an average hopping energy of 27.64 meV have been determined from the dark electrical measurements. When the sample was exposed to illumination at a specific excitation flux and energy, the values of the conductivity activation energy, the average hopping energy and the average hopping range were significantly decreased. On the other hand, the density of localised states near the Fermi level increased when the light flux was increased. Such behaviour was attributed to a reversible Fermi level shift on photoexcitation
URI: http://repository.aaup.edu/jspui/handle/123456789/1137
ISSN: https://doi.org/10.1080/14786431003767041
Appears in Collections:Faculty & Staff Scientific Research publications

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