Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1178
Title: Refractive index, static dielectric constant, energy band gap and oscillator parameters of Ga2SeS single crystals
Authors: A. F Qasrawi
gasanly, n. m.$Other$Other
Keywords: GAS0.5SE0.5 LAYERED CRYSTALS
GASE SEMICONDUCTOR-DETECTORS
GASXSE1-X SOLID-SOLUTIONS
TEMPERATURE PHOTOLUMINESCENCE;
ELECTRICAL-PROPERTIES
BEAMS
Issue Date: 2007
Publisher: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Citation: Volume204, Issue9 September 2007 Pages 3165-3169
Abstract: The optical properties of Bridgman method grown Ga2SeS crystals have been investigated by means of room-temperature transmittance and reflectance spectral analysis. The optical data have revealed direct and indirect allowed transition band gaps of 2.49 and 2.10 eV, respectively. The room-temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 20.93 eV and 4.01 eV, 6.21 and 2.49, respectively.
URI: http://repository.aaup.edu/jspui/handle/123456789/1178
ISSN: https://doi.org/10.1002/pssa.200723122
Appears in Collections:Faculty & Staff Scientific Research publications

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