Please use this identifier to cite or link to this item:
http://repository.aaup.edu/jspui/handle/123456789/1178
Title: | Refractive index, static dielectric constant, energy band gap and oscillator parameters of Ga2SeS single crystals |
Authors: | A. F Qasrawi gasanly, n. m.$Other$Other |
Keywords: | GAS0.5SE0.5 LAYERED CRYSTALS GASE SEMICONDUCTOR-DETECTORS GASXSE1-X SOLID-SOLUTIONS TEMPERATURE PHOTOLUMINESCENCE; ELECTRICAL-PROPERTIES BEAMS |
Issue Date: | 2007 |
Publisher: | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE |
Citation: | Volume204, Issue9 September 2007 Pages 3165-3169 |
Abstract: | The optical properties of Bridgman method grown Ga2SeS crystals have been investigated by means of room-temperature transmittance and reflectance spectral analysis. The optical data have revealed direct and indirect allowed transition band gaps of 2.49 and 2.10 eV, respectively. The room-temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 20.93 eV and 4.01 eV, 6.21 and 2.49, respectively. |
URI: | http://repository.aaup.edu/jspui/handle/123456789/1178 |
ISSN: | https://doi.org/10.1002/pssa.200723122 |
Appears in Collections: | Faculty & Staff Scientific Research publications |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Admin Tools