Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1107
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dc.contributor.authorA. F Qasrawi-
dc.date.accessioned2020-02-24T12:15:13Z-
dc.date.available2020-02-24T12:15:13Z-
dc.date.issued2006-
dc.identifier.citationVolume 21, Number 6en_US
dc.identifier.issnhttps://doi.org/10.1088/0268-1242/21/6/015-
dc.identifier.urihttp://repository.aaup.edu/jspui/handle/123456789/1107-
dc.description.abstractThe optical properties of amorphous GaSe thin films deposited onto tin oxide (TO) coated glass substrates are presented for the purpose of using this material for the fabrication of metal-semiconductor devices. Specifically, the room temperature direct allowed and forbidden transition energy band gaps of glass/TO and glass/TO/GaSe films are estimated and found to exhibit values of 3.95 and 1.95 eV, respectively. The temperature dependence of the energy band gap of the glass/TO/GaSe is also studied in the temperature range of 295 - 450 K by means of optical transmittance and reflectance spectra. This study allowed the identification of the rate of change of the band gap with temperature as -5.0 x 10(-4) eV K-1 and the 0 K energy band gap as 2.1 eV. The above reported optical parameters of the glass/TO/GaSe structure seem to be suitable for semiconductor device production such as solar cell converters, metal - insulator - semiconductor (MIS), metal-oxide-semiconductor (MOS), MOSFET, etc devices. As an application, we have used the glass/TO/GaSe substrate for fabricating Schottky diodes using Ag and Au point contacts. The diodes are characterized by measuring the current (I) - voltage (V) characteristics at room temperature. The I - V curves exhibit rectifying properties. The I-V data analysis in the Schottky region (below 1.0 V) revealed barrier heights of 0.60 and 0.73 eV for Ag and Au point contacts, respectively.en_US
dc.publisherSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.subjectGASE THIN-FILMSen_US
dc.subjectOPTICAL-PROPERTIESen_US
dc.subjectTEMPERATUREen_US
dc.subjectSEMICONDUCTOR-DETECTORSen_US
dc.subjectBEAMSen_US
dc.subjectBAND-GAPen_US
dc.titleFabrication and characterization of TO/GaSe/(Ag, Au) Schottky diodesen_US
dc.typeArticleen_US
Appears in Collections:Faculty & Staff Scientific Research publications

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