Please use this identifier to cite or link to this item:
|Title:||Exploring the Optical Dynamics in the ITO/As2Se3 Interfaces|
|Authors:||A. F Qasrawi|
al garni, s.e$Other$Other
|Publisher:||Journal of Electronic Materials|
|Citation:||October 2019, Volume 48, Issue 10, pp 6319–6326|
|Abstract:||In this work, the effects of indium tin oxide (ITO) substrates on the structural, compositional, optical dielectric and optical conduction properties of arsenic selenide thin films are investigated. The As2Se3 films which are prepared by the thermal deposition technique under vacuum pressure of 10?5 mbar exhibit an induced crystallization process, improved stoichiometry, increased optical transmittance in the visible range of light and increased dielectric response in the infrared range of light upon replacement of glass substrates by ITO. The ITO/As2Se3 interfaces exhibit conduction and valence band offset values of 0.46 eV and 0.91 eV, respectively. The experimental optical conductivity spectra are theoretically reproduced with the help of the Drude–Lorentz approach for optical conduction. In accordance with this approach, owing to the improved crystallinity of the arsenic selenide, the deposition of As2Se3 onto ITO substrates increases the drift mobility value from ??17.6 cm2/Vs to 34.6 cm2/Vs. It also reduces the density of free carriers by one order of magnitude. The ITO/As2Se3/C heterojunction devices which are tested as band filters which may operate in the frequency domain of 0.01–3.0 GHz revealed low pass filter characteristics below 0.35 GHz and band pass filter characteristics in the remaining spectral range.|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.