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|Title:||Investigations of 2.9-GHz Resonant Microwave-Sensitive Ag/MgO/Ge/Ag Tunneling Diodes|
|Authors:||A. F Qasrawi|
Ge thin films
|Publisher:||JOURNAL OF ELECTRONIC MATERIALS|
|Citation:||Volume 42, Issue 12, pp 3451–3457|
|Abstract:||In this work, a resonant microwave-sensitive tunneling diode has been designed and investigated. The device, which is composed of a magnesium oxide (MgO) layer on an amorphous germanium (Ge) thin film, was characterized by means of temperature-dependent current (I)-voltage (V), room-temperature differential resistance (R)-voltage, and capacitance (C)-voltage characteristics. The device resonating signal was also tested and evaluated at 2.9 GHz. The I-V curves reflected weak temperature dependence and a wide tunneling region with peak-to-valley current ratio of similar to 1.1. The negative differential resistance region shifts toward lower biasing voltages as temperature increases. The true operational limit of the device was determined as 350 K. A novel response of the measured R-V and C-V to the incident alternating-current (ac) signal was observed at 300 K. Particularly, the response to a 100-MHz signal power ranging from the standard Bluetooth limit to the maximum output power of third-generation mobile phones reflects a wide range of tunability with discrete switching property at particular power limits. In addition, when the tunnel device was implanted as an amplifier for a 2.90-GHz resonating signal of the power of wireless local-area network (LAN) levels, signal gain of 80% with signal quality factor of 4.6 x 10(4) was registered. These remarkable properties make devices based on MgO-Ge interfaces suitable as electronic circuit elements for microwave applications, bias- and time-dependent electronic switches, and central processing unit (CPU) clocks.|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
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