Please use this identifier to cite or link to this item:
|Title:||Hall mobility and photoconductivity in TlGaSeS crystals|
|Authors:||A. F Qasrawi|
gasanly, n. m.$Other$Other
|Publisher:||JOURNAL OF APPLIED PHYSICS|
|Citation:||Volume 113, Issue 2|
|Abstract:||In this work, the fundamental properties of the TlGaSeS single crystals are investigated by means of temperature dependent electrical resistivity and Hall mobility. The crystal photo-responsibility as function of illumination intensity and temperature is also tested in the temperature range of 350-160 K. The study allowed the determination of acceptor centers as 230 and 450 meV below and above 260 K, and recombination centers as 181, 363, and 10 meV at low, moderate, and high temperatures, respectively. While the temperature-dependent Hall mobility behaved abnormally, the photoconductivity analysis reflected an illumination intensity dependent recombination center. Namely, the recombination center increased from 10 to 90 meV as the light intensity increased from 27.9 to 76.7 mW cm(-2), respectively. That strange behavior was attributed to the temporary shift in Fermi level caused by photoexcitation. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775577]|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.