Please use this identifier to cite or link to this item:
|Title:||Investigation of the electrical parameters of Ag/p-TlGaSeS/C Schottky contacts|
|Authors:||A. F Qasrawi|
gasanly, n. m.$Other$Other
|Publisher:||MATERIALS SCIENCE AND ENGINEERING B|
|Citation:||Volume 177, Issue 12, Pages 981-985|
|Abstract:||p-type TlGaSeS single crystal was used to fabricate a Schottky device. Silver and carbon metals were used as the Ohmic and Schottky contacts, respectively. The device which displayed wide RF band at 13.200 and narrow band at 62.517 kHz with Q value of 1.4 and of 6.3 x 10(4), respectively, is characterized by means of current (I)-voltage (V), capacitance (C)-voltage characteristics as well as capacitance-frequency (f) characteristics. The device series resistance, ideality factor and barrier height are determined from the I-Vcurve as 35.8 M Omega, 1.2 and 0.74 eV, respectively. The apparent acceptor density and the build in voltage of the device increased with increasing ac signal frequency. The high Q value, observed at 62.517 kHz. indicated a much lower rate of energy loss relative to the stored energy of the device. The energy loss (Q(-1)) is much less than 0.001% of the stored value. The device was tested and found to remain at the same mode of resonance for several hours. It never switched or ceased unless it was tuned off. (c) 2012 Elsevier B.V. All rights reserved.|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.