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DC Field | Value | Language |
---|---|---|
dc.contributor.author | A. F Qasrawi | - |
dc.contributor.author | gasanly, n. m.$Other$Other | - |
dc.date.accessioned | 2020-02-24T12:39:07Z | - |
dc.date.available | 2020-02-24T12:39:07Z | - |
dc.date.issued | 2012-07-15 | - |
dc.identifier.citation | Volume 407, Issue 14, 15 July 2012, Pages 2749-2752 | en_US |
dc.identifier.issn | https://doi.org/10.1016/j.physb.2012.04.020 | - |
dc.identifier.uri | http://repository.aaup.edu/jspui/handle/123456789/1126 | - |
dc.description.abstract | The temperature effects on the capacitance-voltage characteristics as well as the room temperature capacitance-frequency characteristics of TlGaTe2 crystals are investigated. A very wide range of linearly varying tunable capacitance from 6.0 mu F to 60 pF was recorded. The capacitance-voltage characteristics, being recorded in the temperature range of 290-380 K, revealed a linear increase in the build in voltage associated with exponential decrease in the density of non-compensated ionized carriers with increasing temperature. The high temperature (up to 380 K) biasing ability, the linear tunability and the high dielectric constant values ( similar to 10(3)) make the TlGaTe2 crystals applicable in microelectronic components. (C) 2012 Elsevier B.V. All rights reserved. | en_US |
dc.publisher | PHYSICA B-CONDENSED MATTER | en_US |
dc.subject | Varactor | en_US |
dc.subject | TlGaSe2 | en_US |
dc.subject | Capacitance | en_US |
dc.subject | Barrier height | en_US |
dc.title | Temperature-dependent capacitance-voltage biasing of the highly tunable TlGaTe2 crystals | en_US |
dc.type | Article | en_US |
Appears in Collections: | Faculty & Staff Scientific Research publications |
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