Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1126
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dc.contributor.authorA. F Qasrawi-
dc.contributor.authorgasanly, n. m.$Other$Other-
dc.date.accessioned2020-02-24T12:39:07Z-
dc.date.available2020-02-24T12:39:07Z-
dc.date.issued2012-07-15-
dc.identifier.citationVolume 407, Issue 14, 15 July 2012, Pages 2749-2752en_US
dc.identifier.issnhttps://doi.org/10.1016/j.physb.2012.04.020-
dc.identifier.urihttp://repository.aaup.edu/jspui/handle/123456789/1126-
dc.description.abstractThe temperature effects on the capacitance-voltage characteristics as well as the room temperature capacitance-frequency characteristics of TlGaTe2 crystals are investigated. A very wide range of linearly varying tunable capacitance from 6.0 mu F to 60 pF was recorded. The capacitance-voltage characteristics, being recorded in the temperature range of 290-380 K, revealed a linear increase in the build in voltage associated with exponential decrease in the density of non-compensated ionized carriers with increasing temperature. The high temperature (up to 380 K) biasing ability, the linear tunability and the high dielectric constant values ( similar to 10(3)) make the TlGaTe2 crystals applicable in microelectronic components. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.publisherPHYSICA B-CONDENSED MATTERen_US
dc.subjectVaractoren_US
dc.subjectTlGaSe2en_US
dc.subjectCapacitanceen_US
dc.subjectBarrier heighten_US
dc.titleTemperature-dependent capacitance-voltage biasing of the highly tunable TlGaTe2 crystalsen_US
dc.typeArticleen_US
Appears in Collections:Faculty & Staff Scientific Research publications

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