Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1140
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dc.contributor.authorA. F Qasrawi-
dc.contributor.authorgasanly, n. m.$Other$Other-
dc.date.accessioned2020-02-24T12:59:46Z-
dc.date.available2020-02-24T12:59:46Z-
dc.date.issued2009-
dc.identifier.citationVolume 44, Issue 10, October 2009, Pages 2009-2013en_US
dc.identifier.issnhttps://doi.org/10.1016/j.materresbull.2009.06.004-
dc.identifier.urihttp://repository.aaup.edu/jspui/handle/123456789/1140-
dc.description.abstractThe structure, the anisotropy effect on the current transport mechanism and the space charge limited current in Tl4Se3S chain crystals have been studied by means of X-ray diffraction, electrical conductivity measurements along and perpendicular to the crystal's c-axis and the current voltage characteristics. The temperature-dependent electrical conductivity analysis in the region of 150-400 K, revealed the domination of the thermionic emission of charge carriers over the chain boundaries above 210 and 270 K along and perpendicular to the c-axis, respectively. Below these temperatures, the variable range hopping is dominant. At a consistent temperature range, the thermionic emission analysis results in conductivity activation energies of 280 and 182 meV, along and perpendicular to the c-axis, respectively. Likewise, the hopping parameters are altered significantly by the conductivity anisotropy. The current-voltage characteristics revealed the existence of hole trapping state being located at 350 meV above the valence band of the crystal. (C) 2009 Elsevier Ltd. All rights reserved.en_US
dc.publisherMATERIALS RESEARCH BULLETINen_US
dc.subjectSemiconductorsen_US
dc.subjectCrystal growthen_US
dc.subjectX-ray techniqueen_US
dc.subjectElectrical propertiesen_US
dc.titleStructural, electrical and anisotropic properties of Tl4Se3S chain crystalsen_US
dc.typeArticleen_US
Appears in Collections:Faculty & Staff Scientific Research publications

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