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dc.contributor.authorA. F Qasrawi-
dc.contributor.authorelayyat, s. m. s.$AAUP$Palestinian-
dc.contributor.authorgasanly, n. m.$Other$Other-
dc.identifier.citationVolume47, Issue6 June 2012 Pages 615-619en_US
dc.description.abstractAg contacts on the surface of the TlGaSeS single crystals are observed to exhibit Schottky characteristics. The ideality factor of the Ag/ TlGaSeS/Ag device decreased from 5.2 to 1.3 by the reduction of series resistance effect on the I-V characteristics. Cheung's model analysis revealed a series resistance and barrier height of 40.6 KO and 0.32 V, respectively. The device was run on the passive mode by injection with an alternating ac signal of variable frequency in the frequency range of 0-120 MHz and recoding the device capacitance. Several resonance-antiresonance positions in the range of 27-350 KHz were observed. The tangent loss factor of the passive device was observed to decrease with increasing frequency. It exhibited a very low loss value of the order of 10-5 at 120 MHz. Such property is a characteristic of high performance tunable device being suitable as processor clock controller.en_US
dc.subjectbarrier heighten_US
dc.titleDynamical and passive characteristics of the Ag/TlGaSeS/Ag RF resonatorsen_US
Appears in Collections:Faculty & Staff Scientific Research publications

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