Please use this identifier to cite or link to this item:
http://repository.aaup.edu/jspui/handle/123456789/1162
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | A. F Qasrawi | - |
dc.contributor.author | gasanly, n. m.$Other$Other | - |
dc.date.accessioned | 2020-02-24T13:22:30Z | - |
dc.date.available | 2020-02-24T13:22:30Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | Volume: 62 , Issue: 1 , Jan. 2015 | en_US |
dc.identifier.issn | 10.1109/TED.2014.2365831 | - |
dc.identifier.uri | http://repository.aaup.edu/jspui/handle/123456789/1162 | - |
dc.description.abstract | A p-n heterojunction made of MgO and Ga4Se3S single crystal has been successfully produced. The current-voltage curve analysis has shown that the current conduction mechanism is mostly governed by the Richardson-Schottky mechanism. The width of the effective interface region of the p-n junction was found to be 3.72x10(-5)cm. The work function and the electron affinity of the Ga4Se3S crystals were also determined as 4.32 and 3.96 eV, respectively. On the other hand, the capacitance-voltage curve analysis, which was carried out in the power range that extends from Bluetooth to WLAN power outputs, reflected a built-in voltage of 0.48 eV and density of noncompensated carriers of 8.2 x 10(16)cm(-3). The device is observed to exhibit a wide range of negative resistance associated with the tunneling of charged particles at reverse biasing down to similar to 1.28 V. At that voltage, when exposed to a He-Ne laser beam of similar to 3 mW, the device reflected a responsivity of similar to 80. The charge storability increased and the I-V characteristics are significantly shifted. These properties are promising because it indicates the applicability of these tunneling devices in optoelectronics. | en_US |
dc.publisher | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.subject | Communication equipment testing | en_US |
dc.subject | current measurement | en_US |
dc.subject | semiconductor heterojunctions | en_US |
dc.title | Energy Band Diagram And Current Transport Mechanism In p-MgO/n-Ga4Se3S | en_US |
dc.type | Article | en_US |
Appears in Collections: | Faculty & Staff Scientific Research publications |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Admin Tools