Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1167
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dc.contributor.authorA. F Qasrawi-
dc.contributor.authorf.abu-zaid, Samah $AAUP$Palestinian-
dc.contributor.authora.ghanameh, Salam$AAUP$Palestinian-
dc.contributor.authorgasanly, N M $Other$Other-
dc.date.accessioned2020-02-24T13:26:15Z-
dc.date.available2020-02-24T13:26:15Z-
dc.date.issued2014-
dc.identifier.citationMay 2014, Volume 37, Issue 3, pp 505–509en_US
dc.identifier.issnhttps://doi.org/10.1007/s12034-014-0693-y-
dc.identifier.urihttp://repository.aaup.edu/jspui/handle/123456789/1167-
dc.description.abstractThe room temperature, dark and photo-dielectric properties of the novel crystals TlGaSeS are investigated in the frequency, intensity and biasing voltage having ranges of similar to 1-120 MHz, 14-40 klux and 0-1 V, respectively. The crystals are observed to exhibit a dark high frequency effective dielectric constant value of similar to 10.65 x 10(3) with a quality factor of similar to 8.84 x 10(4) at similar to 120 MHz. The dielectric spectra showed sharp resonance-antiresonance peaks in the frequency range of similar to 25-250 kHz. When photoexcited, pronounced increase in the dielectric constant and in the quality factor values with increasing illumination intensity are observed. Signal amplification up to similar to 33% with improved signal quality up to similar to 29% is attainable via photoexcitation. On the other hand, the illuminated capacitance voltage characteristics of the crystals reflected a downward shift in the voltage biasing and in the built-in voltage of the device that is associated with increase in the uncompensated carrier density. The increase in the dielectric constant with increasing illumination intensity is ascribed to the decrease in the crystal's resistance as a result of increased free carrier density. The light sensitivity of the crystals, the improved dielectric properties and the lower biasing voltage obtained via photoexcitation and the well-enhanced signal quality factor of the crystals make them promising candidates for optical communication systems.en_US
dc.publisherBULLETIN OF MATERIALS SCIENCEen_US
dc.subjectVaractoren_US
dc.subjectTlGaSeSen_US
dc.subjectsensorsen_US
dc.subjectdielectricen_US
dc.titleDielectric and photo-dielectric properties of TlGaSeS crystalsen_US
dc.typeArticleen_US
Appears in Collections:Faculty & Staff Scientific Research publications

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