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dc.contributor.authorA. F Qasrawi-
dc.contributor.authorgasanly, n. m.$Other$Other-
dc.identifier.citationVolume 88, 2008 - Issue 22en_US
dc.description.abstractThe extrinsic electronic parameters of Tl2InGaSe4 layered crystals were investigated through measurement of the temperature-dependent dark conductivity, space-charge-limited currents and photoconductivity. Analysis of the dark conductivity reveals the existence of two extrinsic energy levels at 0.40 and 0.51 eV below the conduction band edge, which are dominant above and below 260 K, respectively. Current-voltage characteristics show that the one at 0.51 eV is a trapping energy level with a concentration of (4.8-7.7) x 10(10) cm(3). Photoconductivity measurements reveal the existence of another energy level located at 0.16 eV. In the studied temperature range, the photocurrent increases with increasing temperature. The dependence of the photoconductivity on the incident light intensity exhibits a linear recombination character near room temperature and a supralinear character as the temperature decreases. The change in recombination mechanism is attributed to an exchange in the behavior of sensitizing and recombination centres.en_US
dc.subjectlayered crystalsen_US
dc.subjectelectrical propertiesen_US
dc.subjectelectronic transporten_US
dc.subjectphotoelectrical propertiesen_US
dc.titleSpace-charge-limited currents and photoconductive properties of Tl2InGaSe4 layered crystalsen_US
Appears in Collections:Faculty & Staff Scientific Research publications

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