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Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1178
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dc.contributor.authorA. F Qasrawi-
dc.contributor.authorgasanly, n. m.$Other$Other-
dc.date.accessioned2020-02-24T13:28:48Z-
dc.date.available2020-02-24T13:28:48Z-
dc.date.issued2007-
dc.identifier.citationVolume204, Issue9 September 2007 Pages 3165-3169en_US
dc.identifier.issnhttps://doi.org/10.1002/pssa.200723122-
dc.identifier.urihttp://repository.aaup.edu/jspui/handle/123456789/1178-
dc.description.abstractThe optical properties of Bridgman method grown Ga2SeS crystals have been investigated by means of room-temperature transmittance and reflectance spectral analysis. The optical data have revealed direct and indirect allowed transition band gaps of 2.49 and 2.10 eV, respectively. The room-temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 20.93 eV and 4.01 eV, 6.21 and 2.49, respectively.en_US
dc.publisherPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCEen_US
dc.subjectGAS0.5SE0.5 LAYERED CRYSTALSen_US
dc.subjectGASE SEMICONDUCTOR-DETECTORSen_US
dc.subjectGASXSE1-X SOLID-SOLUTIONSen_US
dc.subjectTEMPERATURE PHOTOLUMINESCENCE;en_US
dc.subjectELECTRICAL-PROPERTIESen_US
dc.subjectBEAMSen_US
dc.titleRefractive index, static dielectric constant, energy band gap and oscillator parameters of Ga2SeS single crystalsen_US
dc.typeArticleen_US
Appears in Collections:Faculty & Staff Scientific Research publications

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