Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1180
Title: Crystal data and some physical properties of Tl2InGaTe4 crystals
Authors: A. F Qasrawi
gasanly, n. m.$Other$Other
Keywords: X-ray diffraction
resistivity
mobility
photoconductivity
electronic transport
Issue Date: 2007
Publisher: CRYSTAL RESEARCH AND TECHNOLOGY
Citation: Volume42, Issue8 August 2007 Pages 807-811
Abstract: The room temperature crystal data, Debye temperature, dark and photoelectrical properties of the Bridgman method grown Tl2InGaTe4 crystals are reported for the first time. The X-ray diffraction technique has revealed that Tl(2)lnGaTe(4) is a single phase crystal of tetragonal body-centered structure belonging to the D-4H(18) - I4mcm space group. A Debye temperature of 124 K is calculated from the results of the X-ray data. The current-voltage measurements have shown the existence of the switching property of the crystals at a critical voltage of 80 V. The dark electrical resistivity and Hall effect measurements indicated the n-type conduction with an electrical resistivity, electron density and Hall mobility of 2.49x 10(3) Omega cm, 4.76x 10(12) cm(-3) and 527 cm V-2(-1) s(-1), respectively. The photosensitivity measurements on the crystal revealed that, the variation of photocurrent with illumination intensity is linear, indicating the domination of monomolecular recombination at room temperature. Moreover, the spectral distribution of the photocurrent allowed the determination of the energy band gap of the crystal studied as 0.88 cV.
URI: http://repository.aaup.edu/jspui/handle/123456789/1180
ISSN: https://doi.org/10.1002/crat.200710909
Appears in Collections:Faculty & Staff Scientific Research publications

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