Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1185
Title: Thermal lattice scattering mobility and carrier effective mass in intrinsic Tl2InGaTe4 single crystals
Authors: A. F Qasrawi
gasanly, n. m.$Other$Other
Keywords: BAND-STRUCTURE
TLINTE2
SEMICONDUCTOR
CONDUCTIVITY
TRANSITION
COMPOUN
TIGATE2;
TLINSE2
Issue Date: 2007
Publisher: JOURNAL OF PHYSICS-CONDENSED MATTER
Citation: Volume 19, Number 15
Abstract: Systematic structural, dark electrical resistivity and Hall coefficient measurements have been carried out on n- type Tl2InGaTe4 single crystals. The data from x- ray powder diffraction allowed determination of the tetragonal unit cell lattice parameters. Analysis of the electrical resistivity and carrier concentration, which was recorded in the temperature range 210 - 350 K, reveals the intrinsic type of conduction with an average energy band gap of 0.85 eV. The temperature- dependent Hall mobility was observed to follow the mu alpha T-3/2 law and was analysed assuming the domination of acoustic phonons scattering. The experimental Hall mobility data for Tl2InGaTe4 crystals agrees with the theoretical acoustic phonon scattering mobility data with an acoustic deformation potential of 7.6 eV.
URI: http://repository.aaup.edu/jspui/handle/123456789/1185
ISSN: https://doi.org/10.1088/0953-8984/19/15/156206
Appears in Collections:Faculty & Staff Scientific Research publications

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