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|Title:||Optical properties of TlInS2 layered single crystals near the absorption edge|
|Authors:||A. F Qasrawi|
gasanly, n. m.$Other$Other
|Publisher:||JOURNAL OF MATERIALS SCIENCE|
|Citation:||June 2006, Volume 41, Issue 11, pp 3569–3572|
|Abstract:||The sample thickness effect on the optical properties of TlInS2 layered crystals has been investigated at room temperature. The absorption coefficient of the samples calculated from the experimental transmittance and reflectance in the photon energy range of 1.10-3.10 eV has two absorption regions. The first is a long-wavelength region of 1.16-1.28 eV. The second region lies above 2.21 eV with a thickness-dependent indirect band gap. The energy gap decreases from 2.333 to 2.255 eV as the sample thickness increases from 27 to 66 mu m. The differential spectra of absorption coefficient demonstrates the existence of a thickness-dependent impurity level being lowered from 2.360 to 2.307 eV as sample thickness increases from 27 to 66 mu m. (c) 2006 Springer Science + Business Media, Inc.|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
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