Free electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong phonon-plasmon coupling regime

Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1201

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DC Field	Value	Language
dc.contributor.author	Shkerdin, Gennady$Other$Other	-
dc.contributor.author	Rabbaa, Sulaiman$AAUP$Palestinian	-
dc.contributor.author	Stiens, Johan$Other$Other	-
dc.contributor.author	Vounckx, Roger$Other$Other	-
dc.date.accessioned	2020-03-03T08:56:51Z	-
dc.date.available	2020-03-03T08:56:51Z	-
dc.date.issued	2012-11	-
dc.identifier.uri	http://repository.aaup.edu/jspui/handle/123456789/1201	-
dc.language.iso	en	en_US
dc.publisher	Journal of Physics D- Applied physics	en_US
dc.title	Free electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong phonon-plasmon coupling regime	en_US
dc.type	Article	en_US
Appears in Collections:	Faculty & Staff Scientific Research publications

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