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|Title:||Design and Characterization of MoO₃/Mg/MoO₃ Interfaces|
|Authors:||Khusayfan, Najla $Other$Other|
negative capacitance (NC)
|Publisher:||IEEE TRANSACTIONS ON ELECTRON DEVICES|
|Citation:||N. M. Khusayfan, and H. K. Khanfar, “Design and Characterization of MoO₃/Mg/MoO₃ Interfaces,” IEEE Transactions on Electron Devices, pp. 1-6, 2020|
|Abstract:||In this article, the physical design and performance of stacked layers of MoO₃/Mg/MoO₃ (MMM) is investigated by means of X-ray diffraction and biasing-dependent impedance spectroscopy techniques. The amorphous ,MMM films which are coated onto Au thin-film substrates in a vacuum media of 10⁻⁵ mbar are observed to exhibit metal oxide semiconductor (MOS) characteristics. The pMOS and nMOS inversion channels are initiated at biasing voltages of -2.0 and +2.0 V, respectively. In addition, the biasing-dependent spectral analysis of the device has shown that the negativity of the capacitance could be linearly increased or decreased based on the MOS mode and applied voltage value. The engineering of the negative capacitance effect in the device makes it preferable to use as voltage controlled linear oscillators which can be employed for noise reducing and parasitic capacitance cancellation. In addition, the analyses of biasing-dependent reflection coefficient spectra in the frequency domain of 0.01-1.80 GHz have shown that the ,MMM ,device exhibits features of bandpass/stop features below and above 1.40 GHz, respectively. The degree of wave transmission can be attenuated by the biasing voltage in the respective channel.|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
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