Hot aluminum substrate induced hexagonal‐tetragonal phase transitions in InSe and performance of Al/InSe/Cu2O pn tunneling devices

Abstract

In the current study, we have considered the induced phase transitions in Al/InSe thin film substrates and employing them for fabrication of InSe/Cu2O tunneling channels. The InSe substrates are observed to prefer the transition from the hexagonal γ‐In2Se3 to the rarely observed tetragonal InSe. The phase transitions are obtained by the thermally assisted diffusion of aluminum, which was already kept at 250°C in a vacuum media of 10−5 mbar before the compensation of InSe. The tetragonal InSe also induced the crystallization of orthorhombic Cu2O with acceptable level of lattice matching along the a‐axis. The Al/InSe/Cu2O/Au heterojunctions, which are electrically analyzed are observed to exhibit rectifying features with the current conduction being dominated by electric fields assisted thermionic emission (tunneling) through a barrier of width of 5.5 to 14.0 nm and barrier height of 0.19 to 0.30 eV. The ac analyses of the capacitance and conductance spectra of this device have shown that it can exhibit high/low capacitance and frequency dependent conductance switching modes at 0.12 GHz in addition to negative capacitance effect in the range of 0.12 to 1.80 GHz. The features of the device are promising as they indicate the suitability of the device for fabrication of field effect transistors, memory devices, and ultrafast switches.