Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1308
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dc.contributor.authorQasrawi, Atef$AAUP$Palestinian-
dc.contributor.authorKayed, Tarek$Other$Other-
dc.date.accessioned2020-10-26T04:10:05Z-
dc.date.available2020-10-26T04:10:05Z-
dc.date.issued2020-10-21-
dc.identifier.citationhttps://doi.org/10.1088/1402-4896/abc384en_US
dc.identifier.issnhttps://doi.org/10.1088/1402-4896/abc384-
dc.identifier.urihttp://repository.aaup.edu/jspui/handle/123456789/1308-
dc.description.abstractIn this article, As2Se3/MoO3 heterojunction devices are structurally, compositionally, optically and electrically characterized. The heterojunction devices which are prepared by the thermal evaporation technique under vacuum pressure of 10-5 mbar are observed to exhibit amorphous nature of growth. The optical spectrophotometry measurements and analyses on the heterojunction devices revealed a conduction and valence band offsets of values of 2.64 and 4.08 eV, respectively. In addition, the dielectric dispersion and the optical conductivity parametric analyses have shown that the heterojunction could exhibit large drift mobility value up to 73.7 cm2/Vs. From electrical point of view, while the capacitance- voltage curves reveal characteristics of MOSFET devices, the current--voltage curves display tunneling diode characteristics. The features of the As2Se3/MoO3 devices including the band offsets, drift mobility, plasmon frequency, microwave band filtering and MOSFET characteristics make them attractive for use as thin films transistors suitable electrical and optical applications.en_US
dc.description.sponsorshipArab American Universityen_US
dc.publisherPhysica Scripta,en_US
dc.relation.ispartofseries0031-8949;-
dc.subjectAs2Se3/MoO3; XRF; MOSFET; dielectric; band offseten_US
dc.titleCharacterization of As2Se3/MoO3 heterojunction designed for multifunctional operationsen_US
dc.typeArticleen_US
Appears in Collections:Faculty & Staff Scientific Research publications

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