Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1314
Title: ROLE OF Au NANOSHEETS IN ENHANCING THE PERFORMANCE OF Yb/ZnS/CdS/Au TUNNELING PHOTOSENSORS
Authors: Qasrawi, Atef$AAUP$Palestinian
Abu Saa, Muayad$AAUP$Palestinian
Khanfar, Hazem$AAUP$Palestinian
Maher, Batool$AAUP$Palestinian
Keywords: : ZnS/Au/CdS, X-ray, Photodiode, 406 nm laser, External quantum efficiency
Issue Date: 20-Nov-2020
Publisher: Chalcogenide Letters
Citation: Chalcogenide Letters Vol. 17, No. 11, November 2020, p. 565 - 572
Series/Report no.: -..... 15848663;
Abstract: In this study, the effects of Au nanosheets of thicknesses of 50 nm on the structural, electrical and photoelectrical properties of Yb/ZnS/CdS/Au (ZAC-0) devices is considered. Stacked layers of ZnS and CdS which are prepared by the thermal evaporation technique onto Yb substrates under vacuum pressure of 10-5 mbar exhibits rectifying characteristics. For these diodes a reverse to forward current ratios of ~105 at biasing voltage of 0.60 V is determined. Insertion of Au nanosheets between the stacked layers of ZnS and CdS increased the current values by three orders of magnitude and changed the current conduction mechanism from thermionic emission to tunneling under reverse biasing conditions. The ZAC-0 device, exhibit a barrier height lowering and barrier widening upon insertion of Au nanosheets. After the participation of Au nanosheets in the structure of the ZAC-0 devices, large photosensitivity and responsivity accompanied with high external quantum efficiency is observed. The responsivity to 406 nm laser radiation is biasing voltage dependent and reaches 135 mA/W at 0.60 V. The features of the Yb/ZnS/Au/CdS/Au photosensors nominate them as promising candidates for use in light communication technology as signal receivers.
URI: http://repository.aaup.edu/jspui/handle/123456789/1314
ISSN: http://www.chalcogen.ro/565_AbusaaM.pdf
Appears in Collections:Faculty & Staff Scientific Research publications

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