Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1332
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dc.contributor.authorQasrawi, Atef$AAUP$Palestinian-
dc.contributor.authorKhanfar, Hazem$AAUP$Palestinian-
dc.contributor.authorAlharbi, Seham$Other$Other-
dc.contributor.authorKhusayfan, Najla$Other$Other-
dc.contributor.authorKayed, Tarek$Other$Other-
dc.date.accessioned2021-02-13T09:41:28Z-
dc.date.available2021-02-13T09:41:28Z-
dc.date.issued2021-02-12-
dc.identifier.citationhttps://doi.org/10.1016/j.ijleo.2021.166506en_US
dc.identifier.issnhttps://doi.org/10.1016/j.ijleo.2021.166506-
dc.identifier.urihttp://repository.aaup.edu/jspui/handle/123456789/1332-
dc.description.abstractHerein, the formation, structural, morphological, compositional, optical, dielectric, photoelectrical and electrical properties of the CdSe/GeO2 heterojunctions are explored. While the surface displayed formation of deficient GeO, the bulk of the films exhibited correct stoichiometry of GeO2 and CdSe. It is found that stacking of GeO2 onto CdSe enhances the crystallinity of CdSe by reducing the defects concentrations. It blue shifts the energy band gap of CdSe from 1.74 eV to 2.60 eV. The stacked layers of CdSe/GeO2 displayed conduction and valence band offsets of 2.34 eV and 1.23 eV, respectively. In addition, the Drude-Lorentz model analyses have shown that the coating of GeO2 onto CdSe, highly increases the drift mobility of charge carriers and tunes the plasmon frequency making it more appropriate for optoelectronic device applications. When exposed to light irradiation, an illumination intensity dependent photosensitivity is observed. The photoconduction mechanism is governed by the sublinear recombination with exponential trap distribution. Moreover, the capacitance –voltage characteristics of the device revealed metal-oxide-semiconductor field effect transistors (MOSFET) characteristics. The built in potential for this device under reverse biasing conditions reached 4.74 eV.en_US
dc.description.sponsorshipUniversity of Jeddahen_US
dc.language.isoenen_US
dc.publisherOptiken_US
dc.relation.ispartofseries0030-4026;166506-
dc.subjectCdSe/GeO2 XPS dielectric MOSFET band offsets photoconductivityen_US
dc.titleBand offsets, dielectric dispersion and Some applications of CdSe/GeO2 heterojunctionsen_US
dc.typeArticleen_US
Appears in Collections:Faculty & Staff Scientific Research publications

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