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DC Field | Value | Language |
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dc.contributor.author | Qasrawi, Atef$AAUP$Palestinian | - |
dc.contributor.author | Latifah, Alfhaid$Other$Other | - |
dc.contributor.author | Sabah, Algarni$Other$Other | - |
dc.date.accessioned | 2021-03-08T09:30:32Z | - |
dc.date.available | 2021-03-08T09:30:32Z | - |
dc.date.issued | 2021-03-06 | - |
dc.identifier.citation | Chalcogenide Letters Vol. 18, No. 3, March 2021, p. 113 - 121 | en_US |
dc.identifier.issn | https://chalcogen.ro/113_AlfhaidLHK.pdf | - |
dc.identifier.uri | http://repository.aaup.edu/jspui/handle/123456789/1358 | - |
dc.description.abstract | Herein, we report the design and experimental characterization of a broken gap heterojunction devices fabricated by vacuum evaporation of Yb/InSe/Sb2Te3/Au stacked layers. The structural characterizations of the stacked layers revealed an amorphous/polycrystalline heterojunction type. The measurements of capacitance-voltage characteristics in the frequency domain of 1.0-9.0 MHz displayed tunable metal-oxidesemiconductor (MOS) characteristics. The frequency dependent built-in voltage, depletion width, and free carrier density is also investigated. In addition, the analyses of currentvoltage characteristics have shown that the device displays highly stable current rectification ratios of ~103 above 0.20 V. Moreover, the ac signal analyses in the frequency domain of 10-1800 MHz have shown the possible tunability of the conductance and capacitance over a wide range of frequency. Furthermore, the microwave cutoff frequency spectra indicated increasing cutoff frequency limits with increasing incident signal frequency. The microwave cutoff frequency reached 7.1 GHz for a propagating signal of frequency of 1800 MHz. | en_US |
dc.description.sponsorship | Ha'il University | en_US |
dc.language.iso | en | en_US |
dc.publisher | Chalcogenide Letters | en_US |
dc.subject | : InSe/Sb2Te3, Broken gap, Microwave cavity, MOS capacitors, Bandstop filter | en_US |
dc.title | Yb/InSe/Sb2Te3/Au BROKEN GAP HETEROJUNCTION DEVICES DESIGNED AS CURRENT RECTIFIERS, TUNABLE MOS CAPACITORS AND GIGAHERTZ MICROWAVE CAVITIES | en_US |
dc.type | Article | en_US |
Appears in Collections: | Faculty & Staff Scientific Research publications |
Files in This Item:
File | Description | Size | Format | |
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225-2021-papers -07- Yb-InSE-Sb2Te3 -Chal Lett (atef Latifa)-published istinye.pdf | 608.68 kB | Adobe PDF | View/Open |
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