Design and Characterization of Yb/p−SiO2/(Yb, In) Thin‑film Transistors for 5G Resonators

Abstract

Herein, Yb/p− SiO2/(Yb, In) multifunctional thin-film transistors (TFTs) are designed and characterized. The TFT devices are fabricated in a vacuum thermal evaporation technique under a vacuum pressure of 10−5 mbar. The transistors are composed of 100-nm-thick layer of p-SiO2 coated onto ytterbium substrates. While the Yb/SiO2/Yb back-to-back Schottky (BBS) channels display NMOS (metal–oxide–semiconductor) characteristics and behave as current rectifiers with rectification ratios of 3.2 ×102, the Yb/SiO2/In BBS channels show PMOS characteristics and displayed a non-rectifying properties. Investigations which targeted ac signal analysis on these devices in the frequency domain of 0.01-1.80 GHz have shown that the current conduction are dominated by the correlated barrier hoping and by the quantum mechanical tunneling. The density of localized states near Fermi level and the relaxation times are highly influenced by the orbital overlapping of Yb and In metals with that of SiO2. It was shown that; while Yb/SiO2/Yb channels are suitable for use as microwave band filters, Yb/SiO2/In can perform as radiowave band reject filters. The calculated notch and microwave cutoff frequencies for these filters lay in the range defined for 4G/5G mobile technologies. The Yb/SiO2/Yb filters can pass more than 96% of the propagating signal with high-quality power transmissions.