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|Title:||Characterization of Au/As2Se3 Multifunctional Tunneling Devices|
|Authors:||A. F Qasrawi|
|Keywords:||As2Se3; X-ray; Tunneling diodes; negative capacitance; parasitic|
|Publisher:||Physica Status Solidi (a)- Wiley|
|Abstract:||In this article, we report the physical design and characterization of Au/As2Se3 Schottky barrier that is prepared under vacuum pressure of 10−5 mbar. The Schottky diodes are characterized by means of X‐ray diffraction, energy dispersive X‐ray spectroscopy, current‐voltage characteristics, and conductivity, capacitance and impedance spectroscopy. It was observed that, the Schottky barriers exhibit a biasing dependent large rectification ratio with current conduction mechanisms dominated by the electric field assisted quantum mechanical tunneling through a barrier height of 0.29 eV and depletion width of 13.3 nm. While the spectral analysis of the ac conductivity revealed mixed conduction with the contribution of both of the tunneling and correlated barriers hopping mechanisms, the capacitance spectra displayed resonance‐antiresonance phenomena at 0.201 GHz. A wide range (0.21‐1.80 GHz) of negative capacitance (NC) effects was observed in the devices. In addition, the impedance spectroscopy analyses have shown that the Au/As2Se3 devices exhibit band stop features with notch frequency of 1.14 GHz and return loss value of 16 dB. The NC effect, resonance‐ antiresonance, filtering features as well as the high rectification ratio at relatively low biasing voltage (∽0.30 V) nominates the Au/As2Se3 devices for applications which require noise reduction, parasitic effect cancellations and microwave filtering.|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
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