Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1677
Title: La/Ge stacked nanosheets designed as optical resonators, microwave oscillators and 5 G/6 G gigahertz receivers
Authors: Qasrawi, A. F. $AAUP$Palestinian
Alkhamisi, Manal M. $Other$Palestinian
Khanfar, Hazem$AAUP$Palestinian
Keywords: La/Ge/Au Schottky devices Optical filters, Lorentz oscillator, microwave resonator
Issue Date: 25-Jun-2023
Publisher: Optik
Citation: https://www.sciencedirect.com/science/article/abs/pii/S0030402623006022
Series/Report no.: 0030-4026;
Abstract: Glass/Ge and La/Ge stacked layers, 100 nm thick, were prepared via thermal evaporation under a vacuum pressure of 10−5 mbar. Structural analysis confirmed amorphous growth of Ge nanosheets. Optically coating Ge onto La improved light absorption, energy band gap, and dielectric responses. In addition, dielectric spectra fitting using Lorentz approach showed increased free electron density, plasmon frequency, and drift mobility (up to 1153 cm2/Vs) in Ge due to lanthanum presence. Moreover, LGA Schottky barrier devices (La/Ge/Au) exhibited tunneling- type current conduction with 0.815 eV barrier height and 40 nm width. Resistance spectra of these Schottky barriers displayed negative resistance near 0.40 GHz, while capacitance spectra showed resonance-antiresonance behavior. La/Ge and LGA interface can be utilized for optical receivers and microwave resonators in 5 G/6 G technologies.
URI: http://repository.aaup.edu/jspui/handle/123456789/1677
ISSN: 10.1016/j.ijleo.2023.171105
Appears in Collections:Faculty & Staff Scientific Research publications

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