Performance of PT/CRSE Schottky diodes designed for 5G/6G technology applications

Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1764

Full metadata record

DC Field	Value	Language
dc.contributor.author	Qasrawi, Atef$AAUP$Palestinian	-
dc.contributor.author	Alfhaid, Latifa$Other$Other	-
dc.date.accessioned	2024-01-21T07:43:14Z	-
dc.date.available	2024-01-21T07:43:14Z	-
dc.date.issued	2024-01-17	-
dc.identifier.citation	Journal of Ovonic Research , 20, (2024), 65-74	en_US
dc.identifier.issn	https://doi.org/10.15251/JOR.2024.201.65	-
dc.identifier.uri	http://repository.aaup.edu/jspui/handle/123456789/1764	-
dc.description.abstract	Herein thin films of CrSe deposited by the thermal evaporation technique onto Pt substrates are designed as Schottky diodes. It is observed that the Pt/CrSe/C (PCC) Schottky diodes are of tunneling type showing barrier height and widths of 0.56 eV and 18 nm, respectively. These diodes displayed biasing dependent nonlinearity and negative slope of differential resistance. The analyses of the cutoff frequency spectra indicated that PCC devices can exhibit high cutoff frequency up to 17 GHz based on the driving signal frequency. The features of the PCC devices make it promising as electronic component suitable for 5G/6G technology applications.	en_US
dc.language.iso	en	en_US
dc.publisher	Journal of Ovonic Research	en_US
dc.relation.ispartofseries	1842-2403;	-
dc.subject	: Pt/CrSe, Tunneling barriers, Microwaves, Cutoff frequency, 6G technology	en_US
dc.title	Performance of PT/CRSE Schottky diodes designed for 5G/6G technology applications	en_US
dc.type	Article	en_US
Appears in Collections:	Faculty & Staff Scientific Research publications

Files in This Item:

File	Description	Size	Format
298-2024-04-Pt-Crse-(Atef Latifa) Ovonic published.pdf		474.46 kB	Adobe PDF	View/Open

Admin Tools