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|Title:||Enhancement of Nonlinear Optical and Dielectric Properties of Cu2O films Sandwiched with Indium Slabs|
|Authors:||A. F Qasrawi|
|Keywords:||Cu2O/In/Cu2O; plasmonic; drift mobility; stacked layers; optical properties|
|Publisher:||Physica Status Solidi (b)- Wiley|
|Abstract:||In this work, the effects of insertion of indium slabs of thicknesses of 100 nm on the performance of stacked layers of Cu2O are reported. Cu2O/In/Cu2O thin films which are coated onto ultrasonically cleaned glass substrates are structurally, morphologically, optically and dielectrically studied. The glassy films of Cu2O displayed larger well-ordered grains in an amorphous sea of Cu2O upon insertion of indium slabs between layers of Cu2O. Optically, the indium slabs increased the light absorbability in the IR region by 12.5 times, narrowed the energy band gap and widened the energy band tails region. It also enhanced the nonlinearity in the dielectric response and increased the dielectric constant values by 2.5 times. In addition, the optical conductivity parameters are obtained from the fittings of the dielectric spectra. The analyses revealed an enhancement in the drift mobility, plasmon frequency and free carrier density via stacking of indium layer between layers of Cu2O. The drift mobility and plasmon frequency values reached 232.4 cm^2/Vs and 3.95 GHz at a reduced hole-plasmon frequency of value of 6.0×〖10〗^14 Hz (2.48 eV). The values are promising as they indicate the applicability of the Cu2O/In/Cu2O interfaces in optoelectronics as thin film transistors and electromagnetic wave cavities.|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
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