n-Si/p-BaO/p-SiO2 heterojunctions designed as negative capacitance and negative conductance sources, 6G technology Q3 frequency stabilizers, and current rectifiers

Abstract

Barium oxide thin films were deposited on n-type Si wafers and coated with silicon oxide nanosheets to develop multifunctional electronic devices. Two channels, n-Si/p-BaO (SB) and n-Si/p-BaO/p-SiO2 (SBS), were fabricated under high vacuum (10−5 mbar). The SB channel served as a microwave resonator and a negative capacitance (NC) source, while the SBS channel exhibited suppressedNCand a negative conductance (NG) effect.NCandNGeffects dominate in the frequency ranges of 1.18–1.80 GHz and 1.16-.80 GHz, respectively. Both channels demonstrated high cutoff frequencies exceeding 200 GHz, making them effective as 6G band filters and high-frequency stabilizers. Additionally, the current–voltage characteristics revealed strong temperature dependent asymmetry, with ratios of 52 and 132 at 5.0 Vfor SB and SBS, respectively, enabling their use as electronic switches and current rectifiers even at 433 K. These devices combineNCandNGfeatures, high-frequency stabilization, and current rectification, showcasing their potential for advanced multifunctional applications.