Pulsed laser-induced crystallization of amorphous Cu2O thin films for enhanced electro-optical properties and advanced Q3 communication technologies

Abstract

Herein, amorphous copper oxide thin films are irradiated with laser pulses of various pulse widths ( PW) and repetition frequencies ( ( fR) to achieve ultrafast crystallinity and obtain enhanced features suiting electro-optical systems. Pulsed laser irradiated

(PLI) films exhibited crystalline orthorhom fR bic- hexagonal structure when irradiated with PW of 5.0 ms and 1.0 Hz and preferred the = hexagonal structure as amajor phase at PW value of 50.0ms and f 1.0 Hz R . The crystallinity is = 1.0 Hz R = enhanced with increasing PW and values. Films irradiatedwith pulsed laser of f = 1.0 1.0 R Hz fR = 1.0 R = exhibited interestingmorphology presented by growth of nano-grains at PW 5.0ms that atPW converts to textured microspheres 50 ms. Optically, the films transmittance increased and reflectance decreased with increasing PW value leading to widening of the energy band gap for most of the irradiated films. The PLI films were used for the design of planner waveguides suitable for global system for mobile communications technology showing negative capacitance effect and excellent impedance match and signal transfer properties presented by return loss value of 29 dB and reflection coefficient value of 0.036 at quad band frequency of 1800 MHz. These ideal features of the PLI films make them suitable for applications concerned communication technology.