Please use this identifier to cite or link to this item:
http://repository.aaup.edu/jspui/handle/123456789/817
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | A. F Qasrawi | - |
dc.contributor.author | nm gasanly | - |
dc.date.accessioned | 2020-02-10T12:38:13Z | - |
dc.date.available | 2020-02-10T12:38:13Z | - |
dc.date.issued | 2004 | - |
dc.identifier.uri | https://doi.org/10.1016/j.materresbull.2003.12.018 | - |
dc.description.abstract | Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respectively, with a donor to acceptor compensating ratio of 0.69 are also being identified. The Hall mobility is found to be limited by the hole-phonon short-range interactions scattering with a hole-phonon coupling constant of 0.17. (C) 2004 Elsevier Ltd. All rights reserved. | - |
dc.publisher | MATERIALS RESEARCH BULLETIN | - |
dc.subject | semiconductors; Chalcogenides; layered compounds; defects; electrical properties | - |
dc.title | Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals | - |
dc.type | Article | - |
Appears in Collections: | Faculty & Staff Scientific Research publications |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Admin Tools