Please use this identifier to cite or link to this item:
Title: Investigation of carrier scattering mechanisms in TIInS2 single crystals by Hall effect measurements
Authors: A. F Qasrawi
nm gasanly
Keywords: TIInS2; Hall effect; conductivity; mobility; coupling constant; phonon; scattering
Issue Date: 2004
Abstract: TlInS2 single crystals are studied through the conductivity and Hall effect measurements in the temperature regions of 100-400 and 170-400 K, respectively. An anomalous behavior of Hall voltage, which changes sign below 315 K, is interpreted through the existence of deep donor impurity levels that behave as acceptor levels when are empty. The hole and electron mobility are limited by the hole- and electron-phonon short range interactions scattering above and below 315 K, respectively. An energy level of 35 meV and a set of donor energy levels located at 360, 280, 220 and 170/152 meV are determined from the temperature dependencies of the carrier concentration and conductivity. A hole, electron, hole-electron pair effective masses of 0.24 in,, 0.14 m(o) and 0.09 m(o) and hole- and electron-phonon coupling constants of 0.50 and 0.64, respectively, are obtained from the Hall effect measurements. The theoretical fit of the Hall coefficient reveals a hole to electron mobility ratio of 0.8. (C) 2004 WILEY-VCH Verlag Gmbh & Co. KGaA, Weinheim.
URI: 10.1002/1521-4079(200206)37:63.0.CO;2-Z
Appears in Collections:Faculty & Staff Scientific Research publications

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Admin Tools