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|Title:||Optoelectronic properties of Ga(4)Se(3)S-layered single crystals|
|Authors:||A. F Qasrawi|
|Keywords:||GASE SEMICONDUCTOR-DETECTORS; LAYERED CRYSTALS; PHOTOCONDUCTIVE PROPERTIES; PHOTOLUMINESCENCE; EXCITATION; BEAMS|
|Abstract:||The optoelectronic properties of Bridgman method-grown Ga(4)Se(3)S single crystals have been investigated by means of room temperature electrical resistivity, temperature-dependent photosensitivity and temperature-dependent optical absorption. The photosensitivity was observed to increase with decreasing temperature, the illumination dependence of which was found to exhibit monomolecular recombination in the bulk at 300 K. The absorption coefficient, which was calculated in the incident photon energy range of 2.01-2.35 eV, increased with increasing temperature. Consistently, the absorption edge shifts to lower energy values. The fundamental absorption edge corresponds to an indirect allowed transitions energy gap (2.08 eV at 300 K) that exhibits a temperature coefficient of -95 x 10(-4) eVK(-1).|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
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