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|Title:||Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements|
|Authors:||A. F Qasrawi|
|Keywords:||SINGLE-CRYSTALS; PHOTOCONDUCTIVE PROPERTIES; OSCILLATOR PARAMETERS; SOLID-SOLUTIONS; BAND GAP; GASE; PHOTOLUMINESCENCE; SEMICONDUCTORS; GA2SES|
|Publisher:||PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE|
|Abstract:||In this work, the dark electrical resistivity, charge carriers density and Hall mobility of Ga4Se3S single crystals have been measured and analyzed in the temperature region of 200-350 K. The data analyses have shown that this crystal exhibits an extrinsic n-type of conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of energy level as 0.31 eV. The temperature dependence of carrier density was analyzed by using the single donor-single acceptor model. The latter analysis allowed the determination of electron effective mass as 0.38m(0), hole effective mass as 0.42m(0), donor impurity energy level as 0.45 eV, acceptor-donor concentration ratio (N-a/N-d) as 0.97 and a donor-acceptor concentration difference as N-d - N-a = 1.5 x 10(11) cm(-3). The Hall mobility of Ga4Se3S is found to increase with decreasing temperature following a power law of slope of similar to(-6.3). The abnormal behavior of mobility was attributed to the domination of phonon scattering and/or crystals anisotropy. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
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